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| Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC2690 2SC2690A DESCRIPTION With TO-126 package Complement to type 2SA1220/1220A APPLICATIONS For use in audio and radio frequency power amplifiers PINNING PIN 1 2 3 DESCRIPTION Emitter Collector;connected to mounting base Base Absolute maximum ratings(Ta=25ae ) SYMBOL VCBO Collector-base voltage PARAMETER VCEO INC Collector-emitter voltage ES ANG H 2SC2690A 2SC2690 2SC2690A 2SC2690 MIC E Open emitter Open base Open collector CONDITIONS OND TOR UC VALUE 120 160 120 160 5 1.2 2.5 0.3 UNIT V V V V A A A VEBO IC ICM IB Emitter-base voltage Collector current Collector current-Peak Base current Ta=25ae PD Total power dissipation TC=25ae Tj Tstg Junction temperature Storage temperature -55 1.2 W 20 150 +150 ae ae Inchange Semiconductor Product Specification Silicon NPN Power Transistors CHARACTERISTICS Tj=25ae unless otherwise specified PARAMETER Collector-emitter saturation voltage Base-emitter saturation voltage Collector cut-off current Emitter cut-off current DC current gain DC current gain Output capacitance Transition frequency CONDITIONS IC=1A; IB=0.2A IC=1A ;IB=0.2A VCB=120V; IE=0 VEB=3V; IC=0 IC=5mA ; VCE=5V IC=0.3A ; VCE=5V IE=0 ; VCB=10V f=1MHz IC=0.2A ; VCE=5V 2SC2690 2SC2690A SYMBOL VCEsat VBEsat ICBO IEBO hFE-1 hFE-2 Cob fT MIN TYP. MAX 0.7 1.3 1 1 UNIT V V |I |I A A 35 60 19 155 320 pF MHz hFE-2 Classifications R 60-120 Q P 160-320 CHA IN 100-200 E SEM NG OND IC TOR UC 2 Inchange Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE 2SC2690 2SC2690A CHA IN E SEM NG OND IC TOR UC Fig.2 Outline dimensions 3 Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC2690 2SC2690A CHA IN E SEM NG OND IC TOR UC 4 |
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